一、基本信息

姓??? 名：王文娟??????????????????

性??? 別：女?????????????????????????

籍??? 貫：江蘇????????????????

出生年月：1980年8月??????????????????

畢業(yè)院校：北京郵電大學(xué)?????????????????????????????????????????????????

學(xué)歷學(xué)位：研究生/博士????????????????????

技術(shù)職務(wù)：研究員?????????????????

導(dǎo)師類別：博導(dǎo)?????????????????

工作部門：中國科學(xué)院上海技術(shù)物理研究所 物理室?????????????

聯(lián)系電話：021-25051874???????????????

電子郵箱：wangwj@mail.sitp.ac.cn????????????????????

二、工作簡歷

2007.07至今，中國科學(xué)院上海技術(shù)物理研究所。

2012.04-2012.12，新加坡南洋理工大學(xué)，Research fellow.

三、學(xué)術(shù)兼職

INFRARED PHYS TECHN、J. Appl. Phys、SENSORS等期刊審稿人

四、科研工作簡介

面向量子信息技術(shù)的應(yīng)用需求，主要從事InP基近紅外單光子探測技術(shù)研究，內(nèi)容涵蓋： InP基雪崩單光子探測器及焦平面研究、人工微結(jié)構(gòu)“光子學(xué)調(diào)控”光電器件研究、光電聯(lián)合調(diào)控的理論模型與機理研究、近紅外單光子探測技術(shù)工程應(yīng)用研究。機理上突破了深能級缺陷態(tài)對暗電流的影響機制，通過電場調(diào)節(jié)和缺陷控制，解決高信噪比、近室溫工作難題；突破小像元尺寸的高效光耦合機制，通過單片集成超構(gòu)透鏡，解決單光子焦平面陣列規(guī)模難以進一步擴大的難題。實現(xiàn)了近紅外單光子探測器的自主可控，性能達到國際先進水平，并成功應(yīng)用在典型量子激光成像、遠距離激光測距等工程項目中。

五、代表性論文專利

1.?Jinghua Sun, Wenjuan Wang*, Yicheng Zhu, Zilu Guo, Yufei Qi, Weiming Xu，Effects of Gamma irradiation on performance of InGaAsP/InP single-photon avalanche diodes, Infrared Millim. Waves，2024, 43 (1): 44.

2.?QI Yu-Fei, WANG Wen-Juan*, SUN Jing-Hua, Wu Wen, Liang Yan, QU Hui-Dan, Zhou Min, Lu Wei*, High detection efficiency InGaAsP/InP single-photon avalanche diode at room temperature, Infrared Millim. Waves,?2024, 43 (1): 1.

3.?Zilu Guo, Wenjuan Wang*, Yangjun Li, Huidan Qu, Liuyan Fan, Xiren Chen, Yicheng Zhu, Yue Gu， Yajie Wang，Changlin Zheng，Pingping Chen*, Wei Lu*, Correlation between MBE deoxidation conditions and InGaAs/InP APD performance, Infrared Millim. Waves，2024, 43 (1): 63.

4.?Zhu Y, Wang W*, Zhou M, Qu H, Li G, Chen P*, Lu W*，The study and optimization of ICP deep etching at a low-temperature for InP solid-immersion metalens fabrication，Materials Science in Semiconductor Processing, 2023, 166(107700).

5.?Zilu Guo , Wenjuan Wang*?, Yangjun Li, Huidan Qu, Liuyan Fan, Xiren Chen, Yicheng Zhu,?Yue Gu, Yajie Wang , Changlin Zheng , Pingping Chen*, and Wei Lu*, Material defects and dark currents in InGaAs/InP avalanche photodiode devices，IEEE Transactions on Electron Devices, 2022, 69(9): 4944-9

6.?Yicheng Zhu,?WenjuanWang*, Feilong Yu, Qingquan Liu, Zilu Guo, Guanhai Li,?Pingping Chen?and Wei Lu*, The Impact of Manufacturing Imperfections on the Performance of Metalenses and a Manufacturing-Tolerant Design Method，Micromachines, 2022, 13(9).

7.?Qing Li, Ting He, Kun Zhang, Yunlong Xiao, Ke Deng, Jinshui Miao*, Ning Li, Wenjuan Wang*, Wei Lu*, Direct mapping and characterization of the surface local field in InGaAs/InP avalanche photodetectors Infrared Physics & Technology, 123 (2022) 104162

8.?Hao Han, Yicheng Zhu, Zilu Guo, Zhifeng Li, Huidan Qu, Wantian Gao, Ding Wang, Wenjuan?Wang*, High performance InGaAs/InP avalanche photodiode integrated with metal-insulator-metal microcavity Optical and Quantum Electronics, (2021) 53:307.

9.?Min Zhou, Wenjuan Wang*, Huidan Qu, Hao Han, Yicheng Zhu, Zilu Guo, Lu Gui, Xianying Wang, Wei Lu, InGaAsP/InP single photon avalanche diodes with ultra high photon detection efficiency Optical and Quantum Electronics, (2020) 52:299

10.?J. Wen,?W. J. Wang*, X. R. Chen, N. Li, X. S. Chen, and W. Lu*, Origin of large dark current increase in InGaAs/InP avalanche photodiode, J. Appl. Phys, 2018, 123, 161530.

11.?J. Wen,?W. J. Wang*, N. Li, Z. F. Li, W. Lu*, Plasmonic optical convergence microcavity based on the metal-insulator-metal microstructure, Appl. Phys. Lett., 2017, 110, 231105.

12.?J. Wen,?W. J. Wang*, N. Li, Z. F. Li, W. Lu, Light enhancement by metal-insulator-metal plasmonic focusing cavity, Opt Quant Electron, 2016, 48:150.

13.?Q. Y. Zeng,?W. J. Wang*, J. Wen,?P. X. Xu, W. D. Hu, Q. Li, N. Li, W. Lu, Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes, Opt Quant Electron, 2015, 47: 1671-1677.

14.?Q.Y.Zeng,?W.J.Wang*, J.Wen, L.Huang, X.H.Liu, N.Li, W.Lu*, Effect of surface charge on the dark current of InGaAs/InP avalanche photodiodes, J. Appl. Phys, 2014, 115,164512.

15.?Q. Y. Zeng,?W. J. Wang*, W. D. Hu,?N. Li, W. Lu, Numerical Analysis of Multiplicat- ion Layer on Dark Current for InGaAs/InP Single Photon Avalan-che Diodes, Opt Quant Electron, 2014, 46:1203-1208.

16.?王文娟、諸毅誠、陳平平、陸衛(wèi)、李冠海、陳效雙、曲會丹、周敏、孫京華、郭子路、李陽俊、沈?qū)W礎(chǔ)；一種對非理想刻蝕工藝制備介質(zhì)超表面的補償設(shè)計方法，2023.09.12，中國，202210123406.3.

17.?陸衛(wèi);?王文娟;?鹿建,?一種基于圓偏振態(tài)編碼的全天時量子通信方法, 2020.11.24,?中國, 201810330223.2.

18.?顧溢;?陳平平;?王文娟;?馬英杰;?張永剛;?邵秀梅;?李雪;?龔海梅，一種雪崩探測器過渡層結(jié)構(gòu)及制備方法，2020.6.26,?中國, 201811274488.1.

19.?陸衛(wèi);?李倩;?曾巧玉;?陳效雙;?王文娟;?李寧;?李志鋒, APD紅外探測器及其制作方法, 2014.12.10,?中國, 2011101990999.

20.李志鋒;?景友亮;?陸衛(wèi);?李寧;?陳效雙;?陳平平;?李天信;?王文娟;?甄紅樓;王少偉,?適用于高光譜成像的波段選擇性增強量子阱紅外焦平面, 2017.5.3,?中國, 201510607541 .5.

五、培養(yǎng)學(xué)生情況

截至2024年7月，在讀博士生2人，在讀碩士生2人。

已畢業(yè)博士生4人，已畢業(yè)碩士生5人。就業(yè)率：100%.

主要就業(yè)去向：半導(dǎo)體相關(guān)企業(yè)、科研院所